TAPIR project

Wide Bangap power semiconductor components are used in an increasing number of applications (automotive, PV, more electric aircraft...). However, using these highly performant devices necessitates a very careful implementation in power modules, regarding both electrical and thermal criteria.
In this context, a high power density technology is currently being developed in our laboratory. It is based on the 3D integration of air-cooled switching cells. This implementation allows an excellent compromise between thermal and parasitic elements: the thermal resistance between junction and ambient can be lower than 1 K/W, and stray inductance in the range of 1 nH. This positions this technology among the best ones in comparison with the state of the art.
At this stage, converters based on low voltage switching cells (48 V) have been modeled, manufactured and tested. The TAPIR project, funded by Région Auvergne-Rhône-Alpes focuses on the adaptation of this technology to increase the voltage withstand. The main objectives will be to propose new design methods (mainly electrical and electromagnetic ones) and make a proof of concept.
The work will be part of more global project of technology transfer to a future start-up from G2Elab. Collaborations with other national laboratories are also planned within the DESTINI project funded by the ANR.
 

Photos :

48V elementary switching cell (courtesy of Schweizer Electronic AG).

48V-120A 3-phase inverter.

G2Elab : Yvan Avenas, Jean-Michel Guichon, Jean-Luc Schanen
 

Funding : Région Auvergne-Rhône-Alpes (Pack Ambition Recherche).
Academic finance project management : Grenoble-INP